Exciton transfer at low temperature inGaxIn1−xP:N andGaAs1−xPx:N
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.5217/fulltext
Reference17 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Alloying induced shift between excitation and luminescence of the nitrogen bound exciton in GaPxAs1−x alloys
3. Local-environment effect on the nitrogen bound state inGaPxAs1−xalloys: Experiments and coherent-potential approximation theory
4. Excitation spectroscopy in GaP-rich GaxIn1-xP alloys doped with nitrogen
5. Pressure-Temperature Phase Diagrams of Ferroelectric {N(CH3)4}2CoCl4 and {N(CH3)4}2ZnCl4
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