Confined electron states in ultrathin AlAs single quantum wells under pressure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.11846/fulltext
Reference39 articles.
1. Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices
2. Study of the direct‐indirect band‐gap transition in GaAs/AlAs short‐period superlattices using photocurrent spectroscopy
3. Improvement of the carrier confinement by double‐barrier GaAs/AlAs/(Al,Ga)As quantum well structures
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