Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy-Reference-Cited by-同舟云学术

Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy

Published:1991-05-15 Issue:14 Volume:43 Page:11791-11797
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lu C. R.,Anderson J. R.,Stone D. R.,Beard W. T.,Wilson R. A.,Kuech T. F.,Wright S. L.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.11791/fulltext

Reference27 articles.

1. Modulation Spectroscopy Of Semiconductor Microstructures: An Overview

2. Photoreflectance study of the internal electric fields at the n-type GaAs surface and across the n-type GaAs/substrate interface

3. Modulation spectroscopy as a tool for electronic material characterization

4. Reflectance Modulation by the Surface Field in GaAs

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