Defect formation and diffusion in heavily doped semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.5221/fulltext
Reference21 articles.
1. Diffusion Mechanisms and Point Defects in Silicon and Germanium
2. First-principles calculations of self-diffusion constants in silicon
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5. Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs‐GaAsnpnbipolar transistors
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