Simulations of rf glow discharges inSF6by the relaxation continuum model: Physical structure and function of the narrow-gap reactive-ion etcher
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevE.49.4455/fulltext
Reference40 articles.
1. A mechanistic study of SF6 reactive ion etching of tungsten
2. Plasma Etching of Silicon in SF 6 : Experimental and Reactor Modeling Studies
3. Scaling laws for radio frequency glow discharges for dry etching
4. Algorithms for numerical simulation of radio-frequency glow discharges
5. Comparison of experimental measurements and model predictions for radio‐frequency Ar and SF6 discharges
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