Nanoscale electronic inhomogeneities in 1T-TaS2
Author:
Funder
National Science Foundation
U.S. Department of Defense
Office of Science
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.034002/fulltext
Reference39 articles.
1. On the Phase Transitions in 1 T -TaS 2
2. Topical review: recent progress of charge density waves in 2D transition metal dichalcogenide-based heterojunctions and their applications
3. Ultrafast non-thermal and thermal switching in charge configuration memory devices based on 1T-TaS2
4. Metal chalcogenides for neuromorphic computing: emerging materials and mechanisms
5. Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics
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1. Intercalating Architecture for the Design of Charge Density Wave in Metallic MA2Z4 Materials;Nano Letters;2024-08-15
2. Nanoscale electronic inhomogeneities in 1T-TaS2;Physical Review Materials;2024-03-06
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