Growth-rate dependence of the structural transition of bismuth islands on Si(111) substrates
Author:
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.6.043403/fulltext
Reference37 articles.
1. Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
2. Topological Properties Determined by Atomic Buckling in Self-Assembled Ultrathin Bi(110)
3. Nanofilm Allotrope and Phase Transformation of Ultrathin Bi Film on Si(111)-7×7
4. Electronic structure and surface-mediated metastability of Bi films on Si(111)-7×7studied by angle-resolved photoemission spectroscopy
5. Electronic Structure of Ultrathin Bismuth Films with A7 and Black-Phosphorus-like Structures
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1. Epitaxial growth of Bi, Sb, and Sn;Journal of Vacuum Science & Technology A;2023-06-09
2. Structural transition at the subsurface of few-layer Bi(110) film during the growth;Physical Review Materials;2023-03-24
3. Growth kinetics of a perfectly flat Bi(110) film during low-temperature deposition and subsequent annealing;Surface Science;2023-02
4. The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates;Materials;2022-07-12
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