Carrier localization in quaternary Ga1−xMnxAs1−yPy ferromagnetic semiconductor films-Reference-Cited by-同舟云学术

Carrier localization in quaternary Ga1−xMnxAs1−yPy ferromagnetic semiconductor films

Published:2021-01-07 Issue:1 Volume:5 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Dong Sining,Riney Logan,Liu Xinyu^ORCID,Guo Lei,Zheng Ren-Kui,Li Xiang,Bac Seul-Ki,Kossut Jacek,Dobrowolska Margaret,Assaf Badih,Furdyna Jacek K.^ORCID

Funder

National Science Foundation

National Natural Science Foundation of China

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.014402/fulltext

Reference33 articles.

1. Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers

2. Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

3. Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys

4. Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor

5. Dependence of ferromagnetic properties on phosphorus concentration in Ga1-xMnxAs1-yPy

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