Phononic transport and simulations of annealing processes in nanometric complex structures
Author:
Funder
Horizon 2020
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.4.056007/fulltext
Reference24 articles.
1. Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches
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4. Point defects and dopant diffusion in silicon
5. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
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