Entrance channel effects by populating resonances in theAl26,Si29, andSi30systems
Author:
Publisher
American Physical Society (APS)
Subject
Nuclear and High Energy Physics
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevC.25.313/fulltext
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1. Evidence for superdeformed shape isomeric states inSi28at excitations above 40 MeV through observations of selective particle decays ofO16+12C resonances inBe8and alpha channels;Physical Review C;1993-04-01
2. Energy levels of A = 21–44 nuclei (VII);Nuclear Physics A;1990-12
3. Search for resonances in the14C+16O reaction;Journal of Physics G: Nuclear and Particle Physics;1990-10-01
4. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors;IEEE Transactions on Electron Devices;1990-03
5. Comments, with reply, on 'Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection' by B. Boukriss et al;IEEE Electron Device Letters;1990-03
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