Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors-Reference-Cited by-同舟云学术

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Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

Published:2017-09-22 Issue:3 Volume:8 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Liu Chuan,Li Gongtan,Di Pietro Riccardo,Huang Jie,Noh Yong-Young,Liu Xuying,Minari Takeo

Funder

National Natural Science Foundation of China

Guangdong Science and Technology Department

Guangdong Natural Science Funds

Guangdong Youth Top-notch Talent Support Program

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.8.034020/fulltext

Reference41 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Mechanical and Electronic Properties of Thin-Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications

3. Organic Thin Film Transistors: Structures, Models, Materials, Fabrication, and Applications: A Review

4. The 2016 oxide electronic materials and oxide interfaces roadmap

5. Flexible and Stretchable Physical Sensor Integrated Platforms for Wearable Human-Activity Monitoringand Personal Healthcare

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