Light-Assisted Resistance Collapse in a V2O3 -Based Mott-Insulator Device-Reference-Cited by-同舟云学术

Light-Assisted Resistance Collapse in a V2O3 -Based Mott-Insulator Device

Published:2021-04-13 Issue:4 Volume:15 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Ronchi A.^ORCID,Franceschini P.,Homm P.,Gandolfi M.^ORCID,Ferrini G.^ORCID,Pagliara S.,Banfi F.^ORCID,Menghini M.^ORCID,Locquet J-.P.,Giannetti C.^ORCID

Funder

MIUR

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.15.044023/fulltext

Reference45 articles.

1. Emergent functions of quantum materials

2. Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

3. Dynamics and Control in Complex Transition Metal Oxides

4. Towards properties on demand in quantum materials

5. Mott Memory and Neuromorphic Devices

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