Absolute photoionization cross sections and resonance structure of doubly ionized silicon in the region of the2p−1threshold: Experiment and theory-Reference-Cited by-同舟云学术

Absolute photoionization cross sections and resonance structure of doubly ionized silicon in the region of the2p−1threshold: Experiment and theory

Published:2003-11-21 Issue:5 Volume:68 Page:
ISSN:1050-2947
Container-title:Physical Review A
language:en
Short-container-title:Phys. Rev. A

Author:

Mosnier J.-P.,Sayyad M. H.,Kennedy E. T.,Bizau J.-M.,Cubaynes D.,Wuilleumier F. J.,Champeaux J.-P.,Blancard C.,Varma R. Hari,Banerjee T.,Deshmukh P. C.,Manson S. T.

Publisher

American Physical Society (APS)

Subject

Atomic and Molecular Physics, and Optics

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevA.68.052712/fulltext

Reference20 articles.

1. Photoionization of atomic ions

2. Metastable state contributions to the measured 3p photoabsorption spectrum of Cr+ions in a laser-produced plasma

3. Measurements of absolute cross sections for the photoionisation of Ba+ions

4. Gas phase abundances and conditions along the sight line to the low-halo, inner galaxy star HD 167756

5. Hubble Space Telescope FOS spectroscopy of the ultrashort-period dwarf nova WZ Sagittae: The underlying degenerate

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