Extension of the Theory of the Junction Transistor-Reference-Cited by-同舟云学术

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Extension of the Theory of the Junction Transistor

Published:1954-06-01 Issue:5 Volume:94 Page:1161-1171
ISSN:0031-899X
Container-title:Physical Review
language:en
Short-container-title:Phys. Rev.

Author:

Rittner Edmund S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.94.1161/fulltext

Reference16 articles.

1. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors

2. p−nJunction Transistors

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1. Bipolar Junction Transistor;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-03-14

2. Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events;Solid-State Electronics;2008-05

3. An Investigation of Negative Differential Resistance and Novel Collector–Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures;IEEE Transactions on Electron Devices;2007-03

4. Improved VBIC model for SiGe HBTs with an unified model of heterojunction barrier effects;IEEE Transactions on Electron Devices;2006-04

5. GAIN DEGRADATION AND ENHANCED LOW-DOSE-RATE SENSITIVITY IN BIPOLAR JUNCTION TRANSISTORS;International Journal of High Speed Electronics and Systems;2004-06

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