Elastogalvanomagnetic Effect and Intervalley Scattering inn-Type Germanium
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.103.1240/fulltext
Reference10 articles.
1. Piezoresistance Effect in Germanium and Silicon
2. Transport Properties of a Many-Valley Semiconductor
3. Effect of Pressure on the Electrical Conductivity of InSb
4. Temperature Dependence of the Elastoresistance inn-Type Germanium
5. Speculations on the Energy Band Structure of Ge—Si Alloys
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Infrared cyclotron resonances in InSb at megagauss magnetic fields;Physics Letters A;1973-03
2. Impurity-Assisted Intervalley Electron Scattering of Germanium and Silicon under Uniaxial Compression;Journal of the Physical Society of Japan;1969-02
3. Piezo-Hall Effect in n-Type Germanium;physica status solidi (b);1967
4. Piezoresistance and Piezo-Hall Effects inn- andp-Type Aluminum Antimonide;Physical Review;1966-06-10
5. Piezoresistance measurements on n-type lead sulphide;British Journal of Applied Physics;1966-06
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