Effect of Shear on Impurity Conduction inn-Type Germanium-Reference-Cited by-同舟云学术

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Effect of Shear on Impurity Conduction inn-Type Germanium

Published:1960-09-15 Issue:6 Volume:119 Page:1899-1900
ISSN:0031-899X
Container-title:Physical Review
language:en
Short-container-title:Phys. Rev.

Author:

Fritzsche H.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.119.1899/fulltext

Reference10 articles.

1. Spin Resonance of Donors in Silicon

2. Electron Spin Resonance of an Impurity Level in Silicon

3. Observation of Nuclear Magnetic Resonances via the Electron Spin Resonance Line

4. Electron Spin Resonance Experiments on Shallow Donors in Germanium

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrons in disordered structures;Advances in Physics;2001-11

2. Phonons, Strains, and Pressure in Semiconductors;High Pressure in Semiconductor Physics II;1998

3. The stress dependence of the change in sound velocity in Sb-doped Ge;Journal of Physics: Condensed Matter;1993-10-11

4. The stress dependence of acoustic properties of heavily doped n-type Ge;Journal of Physics: Condensed Matter;1991-06-24

5. Elementary treatment of transport in amorphous semiconductors;Springer Tracts in Modern Physics;1989

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