Temporary Traps in Silicon and Germanium-Reference-Cited by-同舟云学术

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Temporary Traps in Silicon and Germanium

Published:1953-04-01 Issue:1 Volume:90 Page:152-153
ISSN:0031-899X
Container-title:Physical Review
language:en
Short-container-title:Phys. Rev.

Author:

Haynes J. R.,Hornbeck J. A.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.90.152.2/fulltext

Reference1 articles.

1. The Drift Mobility of Electrons in Silicon

Cited by 75 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trap-assisted monolayer ReSe2/Si heterojunction with high photoconductive gain and self-driven broadband photodetector.;Frontiers in Materials;2024-02-15

2. Semimetal–Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer‐Scale Broadband Photonics;Advanced Photonics Research;2023-03-02

3. Hybrid Gate Dielectric of MoS 2 Transistors for Enhanced Photo‐Electronic Stability;Advanced Materials Interfaces;2021-06-27

4. Photoresponse of Natural van der Waals Heterostructures;ACS Nano;2017-05-16

5. Statistical analysis of recombination properties of the boron-oxygen defect in p-type Czochralski silicon;Frontiers in Energy;2016-11-19

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