Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions-Reference-Cited by-同舟云学术

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Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions

Published:2014-11-07 Issue:5 Volume:90 Page:
ISSN:1050-2947
Container-title:Physical Review A
language:en
Short-container-title:Phys. Rev. A

Author:

Baumann Thomas M.,Harman Zoltán,Stark Julian,Beilmann Christian,Liang Guiyun,Mokler Paul H.,Ullrich Joachim,Crespo López-Urrutia José R.

Funder

Helmholtz Association

National Natural Science Foundation of China

Publisher

American Physical Society (APS)

Subject

Atomic and Molecular Physics, and Optics

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevA.90.052704/fulltext

Reference33 articles.

1. Delectronic Recombination and the Temperature of the Solar Corona.

2. Sur l'effet photoélectrique composé

3. Observation of Trielectronic Recombination in Be-like Cl Ions

4. Intershell trielectronic recombination withK-shell excitation inKr30+

5. Prominent Higher-Order Contributions to Electronic Recombination

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1. Theoretical study of dielectronic recombination and electron-impact excitation for helium-like isoelectronic sequence;The European Physical Journal D;2023-09

2. Higher-Order Recombination Processes in Argon Ions Observed via X-ray Emission in an EBIT;Atoms;2022-12-21

3. Calculations of electron-impact excitation and dielectronic recombination rate coefficients of highly charged silicon ions;Physical Review A;2022-01-31

4. Electron-impact recombination and excitation rates for charge-state-selected highly charged Si ions;Physical Review A;2020-06-11

5. Theoretical study on KLL dielectronic and higher-order recombination of boron-like isoelectronic sequence;Journal of Physics: Conference Series;2020-01-01

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