Monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>WSi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:math> : A promising channel material for sub-5-nm-gate homogeneous CMOS devices-Reference-Cited by-同舟云学术

Monolayer WSi2N4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices

Published:2023-12-26 Issue:6 Volume:20 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Li Ying^ORCID,Qi Chunyu,Zhou Xun,Xu Linqiang,Li Qiuhui,Liu Shiming,Yang Chen^ORCID,Liu Shiqi,Xu Lin,Dong Jichao,Fang Shibo,Yang Zongmong^ORCID,Chen Yifan,Sun Xiaotian,Lu Jing

Funder

Ministry of Science and Technology

National Natural Science Foundation of China

Foundation of He’nan Educational Committee

National Center for International Research on Intelligent Nano-Materials and Detection Technology in Environmental Protection

High-performance Computing Platform of Peking University

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.20.064044/fulltext

Reference80 articles.

1. Cramming More Components Onto Integrated Circuits

2. Scaling Challenges for Advanced CMOS Devices

3. Promises and prospects of two-dimensional transistors

4. Recent developments in emerging two-dimensional materials and their applications

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