Resistive switching of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>VO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> films grown on a thermal insulator-Reference-Cited by-同舟云学术

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Resistive switching of VO2 films grown on a thermal insulator

Published:2024-07-10 Issue:1 Volume:22 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Rischau Carl Willem¹^ORCID,Gariglio Stefano¹^ORCID,Triscone Jean-Marc¹,del Valle Javier²

Affiliation:

1. University of Geneva

2. University of Oviedo

Funder

U.S. Office of Naval Research

Swiss National Science Foundation

FEDER

NICOP

Spanish Ministry of Science

Ramón y Cajal Fellowship

Asturias FICYT

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.22.014021/fulltext

Reference39 articles.

1. Metal-insulator transitions

2. Rare-earth nickelatesRNiO3: thin films and heterostructures

3. Electrical switching and Mott transition in VO2

4. Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices

5. Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches

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1. Resistive switching of VO2 films grown on a thermal insulator;Physical Review Applied;2024-07-10

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