Impact of Reference-Layer Stray Field on the Write-Error Rate of Perpendicular Spin-Transfer-Torque Random-Access Memory
Author:
Funder
Science and Engineering Research Board
National Supercomputing Mission
Centre for Development of Advanced Computing
CDAC
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.19.024016/fulltext
Reference20 articles.
1. Basic principles of STT-MRAM cell operation in memory arrays
2. Switching Distributions for Perpendicular Spin-Torque Devices Within the Macrospin Approximation
3. Machine Learning for Statistical Modeling
4. STT-RAM Cell Optimization Considering MTJ and CMOS Variations
5. Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions
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