Hydrogen Interaction with Dislocations in Si
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.84.690/fulltext
Reference38 articles.
1. Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures
2. Hydrogen Enhanced Dislocation Glides in Silicon
3. Kinks on Partials of 60° Dislocations in Silicon as Revealed by a Novel TEM Technique
4. First-principles calculations of the energy barrier to dislocation motion in Si and GaAs
5. Atomic and electronic structures of the 90° partial dislocation in silicon
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ab initio modeling of dislocation core properties in metals and semiconductors;Acta Materialia;2017-02
2. Raman spectroscopy of monoatomic hydrogen at dislocations in silicon;Journal of Physics: Conference Series;2016-02
3. Extended Defects in Semiconductors and Their Interactions with Point Defects and Impurities;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07
4. Multi-scale simulation of the stability and diffusion of lithium in the presence of a 90° partial dislocation in silicon;Journal of Applied Physics;2014-12-07
5. Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers;Solid State Phenomena;2013-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3