Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices-Reference-Cited by-同舟云学术

Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices

Published:2016-10-27 Issue:18 Volume:117 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Cui Yong-Tao,Wen Bo,Ma Eric Y.,Diankov Georgi,Han Zheng,Amet Francois,Taniguchi Takashi,Watanabe Kenji,Goldhaber-Gordon David,Dean Cory R.,Shen Zhi-Xun

Funder

Gordon and Betty Moore Foundation

National Science Foundation

Emergent Phenomena in Quantum Systems (EPiQS)

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.117.186601/fulltext

Reference40 articles.

1. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

2. Electrostatics of edge channels

3. Quantized Hall conductivity in two dimensions

4. Quantized Hall Conductance in a Two-Dimensional Periodic Potential

5. Edge states in the integer quantum Hall effect and the Riemann surface of the Bloch function

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