Substrate Bias Effects on Electron Mobility in Silicon Inversion Layers at Low Temperatures
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.34.15/fulltext
Reference16 articles.
1. Effect of Coulomb scattering on silicon surface mobility
2. Variable-range hopping in a silicon inversion layer
3. The spatial extent of localized state wavefunctions in silicon inversion layers
4. Mott-Anderson Localization in the Two-Dimensional Band Tail of Si Inversion Layers
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