Adsorbate Stucture on Reconstructed Semiconductors: Te and I on Si {111} 7×7 and Ge {111} 2×8
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.48.802/fulltext
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1. Oxidation of Clean Ge and Si Surfaces
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5. Chemisorption-Site Geometry from Polarized Photoemission: Si(111)Cl and Ge(111)Cl
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