Kash, Tsang, and Ulbrich reply
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.65.275/fulltext
Reference3 articles.
1. Comment on ‘‘Hot-electron recombination at neutral acceptors in GaAs: A cw probe of femtosecond intervalley scattering’’
2. Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley Scattering
3. Continuous-wave spectroscopy of femtosecond carrier scattering in GaAs
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1. The effects of intervalley scattering on the cooling of hot carriers in In0.53Ga0.47As;Journal of Physics: Condensed Matter;1994-09-12
2. Time-resolved Raman measurement of intervalley scattering in GaSb;Semiconductor Science and Technology;1994-05-01
3. Short-range deformation-potential interaction and its application to ultrafast processes in semiconductors;Semiconductor Science and Technology;1992-03-01
4. Femtosecond refractive‐index spectral hole burning in intrinsic and doped GaAs;Applied Physics Letters;1991-08-05
5. Effective intervalley deformation potentials in the description of time-resolved and hot-electron luminescence;Solid State Communications;1990-11
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