Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature-Reference-Cited by-同舟云学术

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Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Published:2023-02-22 Issue:8 Volume:130 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Zhang Chenmu,Wang Ruoyu^ORCID,Mishra Himani^ORCID,Liu Yuanyue^ORCID

Funder

Welch Foundation

National Aeronautics and Space Administration

National Renewable Energy Laboratory

Clusters of Texas Advanced Computing Center

Advanced Cyberinfrastructure Coordination Ecosystem: Services & Support

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.130.087001/fulltext

Reference47 articles.

1. Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening

2. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

3. Black phosphorus field-effect transistors

4. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

5. Drift and Conductivity Mobility in Silicon

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