Fermi-Level-Pinning Defects in Highlyn-Doped Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.79.4834/fulltext
Reference26 articles.
1. The nature of electrically inactive antimony in silicon
2. Doping of Si thin films by low‐temperature molecular beam epitaxy
3. Characterization of highly Sb‐doped Si using high‐resolution x‐ray diffraction and transmission electron microscopy
4. Arsenic Clustering in Silicon
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