Barrierless dimer breaking at semiconductor surfaces by chlorine atoms
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.70.962/fulltext
Reference17 articles.
1. Reactive ion etching of GaAs, AlGaAs, and GaSb in Cl2 and SiCl4
2. GaAs and AlGaAs anisotropic fine pattern etching using a new reactive ion beam etching system
3. Molecular layer etching of GaAs
4. Laser bilayer etching of GaAs surfaces
5. Chlorine chemisorption on silicon and germanium surfaces: Photoemission polarization effects with synchrotron radiation
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1. Atomic processes during Cl supersaturation etching ofSi(100)−(2×1);Physical Review B;2009-03-06
2. Cl Insertion onSi(100)−(2×1): Etching Under Conditions of Supersaturation;Physical Review Letters;2007-03-29
3. Adsorption and diffusion of a Cl adatom on the GaAs(001)-c(8×2)ζsurface;Physical Review B;2004-03-16
4. Electronic Structures and Etching Processes of Chlorinated Si(111) Surfaces;Japanese Journal of Applied Physics;2002-04-15
5. Kinetic roughening of GaAs(001) during thermalCl2etching;Physical Review B;2002-03-29
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