Direct Observation of One-Dimensional Ga-Atom Migration on a Si(100)-(2×1)-H Surface: A Local Probe of Adsorption Energy Variation-Reference-Cited by-同舟云学术

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Direct Observation of One-Dimensional Ga-Atom Migration on a Si(100)-(2×1)-H Surface: A Local Probe of Adsorption Energy Variation

Published:1999-11-15 Issue:20 Volume:83 Page:4116-4119
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Hitosugi Taro,Suwa Y.,Matsuura S.,Heike S.,Onogi T.,Watanabe S.,Hasegawa T.,Kitazawa K.,Hashizume T.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.83.4116/fulltext

Reference17 articles.

1. The growth of crystals and the equilibrium structure of their surfaces

2. Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si(001)

3. Binding and diffusion of a Si adatom on the Si(100) surface

4. Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy

5. Diffusion of the Silicon Dimer on Si(001): New Possibilities at 450 K

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2. Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon;Chemistry of Materials;2016-05-09

3. Surface diffusion of Pb single adatoms on theSi(111)−(3×3)R30°−Pbsystem;Physical Review B;2007-07-19

4. Oxygen atoms on Si(100)-(2×1): Imaging with scanning tunneling microscopy;Applied Physics Letters;2006-10-09

5. Surface diffusion of single vacancies onGe(111)−c(2×8)studied by variable temperature scanning tunneling microscopy;Physical Review B;2004-10-15

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