Semiconducting Graphene from Highly Ordered Substrate Interactions-Reference-Cited by-同舟云学术

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Semiconducting Graphene from Highly Ordered Substrate Interactions

Published:2015-09-21 Issue:13 Volume:115 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Nevius M. S.,Conrad M.,Wang F.,Celis A.,Nair M. N.,Taleb-Ibrahimi A.,Tejeda A.,Conrad E. H.

Funder

National Science Foundation

W.M. Keck Foundation

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.115.136802/fulltext

Reference26 articles.

1. Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated with Angle-Resolved Photoemission Spectroscopy

2. Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

3. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

4. Electronic Structure of Epitaxial Graphene Layers on SiC: Effect of the Substrate

5. Ab InitioStudy of Graphene on SiC

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