Critical Doping for the Onset of a Two-Band Superconducting Ground State inSrTiO3−δ-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Critical Doping for the Onset of a Two-Band Superconducting Ground State inSrTiO3−δ

Published:2014-05-21 Issue:20 Volume:112 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Lin Xiao,Bridoux German,Gourgout Adrien,Seyfarth Gabriel,Krämer Steffen,Nardone Marc,Fauqué Benoît,Behnia Kamran

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.112.207002/fulltext

Reference25 articles.

1. Superconductivity in Semiconducting SrTiO3

2. Dependence of the Superconducting Transition Temperature on Carrier Concentration in Semiconducting SrTiO3

3. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

4. Electric field control of the LaAlO3/SrTiO3 interface ground state

5. Superconducting Dome in a Gate-Tuned Band Insulator

Cited by 136 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced superconductivity in SrTiO3 -based interfaces via amorphous Al2O3 capping;Physical Review Materials;2024-08-08

2. Unidirectional Charge Orders Induced by Oxygen Vacancies on SrTiO₃(001);ACS Nano;2024-06-27

3. Helical Topological Superconducting Pairing at Finite Excitation Energies;Physical Review Letters;2024-06-24

4. High-mobility carriers and superconductivity at the SrNbO3−SrTiO3 interface;Physical Review B;2024-05-02

5. Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3;National Science Review;2024-03-29

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3