Ab initioSimulations of Homoepitaxial SiC Growth
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.91.136101/fulltext
Reference12 articles.
1. Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy
2. Epitaxial growth of SiC thin films on Si-stabilized α-SiC(0001) at low temperatures by solid-source molecular beam epitaxy
3. Growth of 6H–SiC on 6H–SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures
4. A climbing image nudged elastic band method for finding saddle points and minimum energy paths
5. Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation
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