Evolution of vicinal Si(001) from double- to single-atomic-height steps with temperature-Reference-Cited by-同舟云学术

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Evolution of vicinal Si(001) from double- to single-atomic-height steps with temperature

Published:1991-11 Issue:20 Volume:67 Page:2830-2833
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

de Miguel J.,Aumann C.,Kariotis R.,Lagally M.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.67.2830/fulltext

Reference15 articles.

1. Spontaneous Formation of Stress Domains on Crystal Surfaces

2. Si(100) Surface under an Externally Applied Stress

3. Stabilities of single-layer and bilayer steps on Si(001) surfaces

4. Direct determination of step and kink energies on vicinal Si(001)

5. LEED study of the stepped surface of vicinal Si (100)

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