Origin of optically induced electron-spin resonance in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Origin of optically induced electron-spin resonance in hydrogenated amorphous silicon

Published:1990-08-06 Issue:6 Volume:65 Page:756-759
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Yamasaki S.,Okushi H.,Matsuda A.,Tanaka K.,Isoya J.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.65.756/fulltext

Reference18 articles.

1. Optically Induced Localized Paramagnetic States in Chalcogenide Glasses

2. Optically Induced Localized Paramagnetic States in Amorphous Semiconductors

3. States in the Gap in Glassy Semiconductors

4. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors

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1. Photoluminescence;Optical Properties of Materials and Their Applications;2019-11-15

2. Hydrogenated Microcrystalline Silicon;Light-Induced Defects in Semiconductors;2014-09-13

3. Atomic and Electronic Structures of Traps in Silicon Oxide and Silicon Oxynitride;Critical Reviews in Solid State and Materials Sciences;2011-07

4. Recombination processes and light-induced defect creation in hydrogenated amorphous silicon;physica status solidi (a);2009-05

5. Understanding the photoluminescence over 13-decade lifetime distribution in a-Si:H;Journal of Non-Crystalline Solids;2006-06

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