Electronic Self-Passivation of Single Vacancy in Black Phosphorus via Ionization-Reference-Cited by-同舟云学术

Electronic Self-Passivation of Single Vacancy in Black Phosphorus via Ionization

Published:2022-04-26 Issue:17 Volume:128 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Fang Hanyan^ORCID,Gallardo Aurelio^ORCID,Dulal Dikshant^ORCID,Qiu Zhizhan,Su Jie,Telychko Mykola,Mahalingam Harshitra^ORCID,Lyu Pin,Han Yixuan,Zheng Yi^ORCID,Cai Yongqing,Rodin Aleksandr^ORCID,Jelínek Pavel^ORCID,Lu Jiong^ORCID

Funder

Ministry of Education - Singapore

Agency for Science, Technology and Research

National Research Foundation Singapore

Yale-NUS College

Grantová Agentura ?eské Republiky

Czech Ministry of Education, Youth and Sports

European Structural and Investment Funds

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.128.176801/fulltext

Reference46 articles.

1. Black phosphorus field-effect transistors

2. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

3. Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

4. High-quality sandwiched black phosphorus heterostructure and its quantum oscillations

5. Rashba valleys and quantum Hall states in few-layer black arsenic

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