Bound phonons andDXcenters in GaAs under hydrostatic pressure
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.68.518/fulltext
Reference19 articles.
1. Observation of Optical Phonons Bound to Neutral Donors
2. Fine structure of acceptor-bound phonons in Raman spectra of ZnTe
3. Phonons bound to sulphur complexes in GaP
4. Bound phonons inn-type GaP
5. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
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1. Magnetopolaron effect on shallow donors in GaN;Physical Review B;2006-11-17
2. LOCAL HYDROGEN AND DEUTERIUM VIBRATIONAL MODES IN Si-DOPED GaAs;International Journal of Modern Physics C;2002-06
3. Local Hydrogen Vibrational Modes in GaAs doped with Chalcogenides;Crystal Research and Technology;2001-11
4. Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH[sub 3])[sub 3]Ga/AsH[sub 3];Journal of The Electrochemical Society;2001
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