Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance-Reference-Cited by-同舟云学术

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Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance

Published:2018-10-24 Issue:17 Volume:121 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Ko Wonhee,Nguyen Giang D.,Kim Hoil,Kim Jun Sung,Zhang X.-G.,Li An-Ping

Funder

Institute for Basic Science

National Research Foundation of Korea

Semiconductor Research Corporation

National Science Foundation

Max Planck-POSTECH Center for Complex Phase Materials

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.121.176801/fulltext

Reference48 articles.

1. Quantum Spin Hall Effect in Graphene

2. Topological Insulators in Three Dimensions

3. Electrical Detection of the Spin Polarization Due to Charge Flow in the Surface State of the Topological Insulator Bi1.5Sb0.5Te1.7Se1.3

4. Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3

5. Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators

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2. Probing Spin-Dependent Ballistic Charge Transport at Single-Nanometer Length Scales;Nano Letters;2023-12-14

3. Long-range adsorbate interactions mediated by two-dimensional Dirac fermions;Chinese Physics B;2022-12-27

4. Breaking of Inversion Symmetry and Interlayer Electronic Coupling in Bilayer Graphene Heterostructure by Structural Implementation of High Electric Displacement Fields;The Journal of Physical Chemistry Letters;2022-12-08

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