Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well-Reference-Cited by-同舟云学术

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Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Published:2021-08-06 Issue:8 Volume:104 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

McJunkin Thomas^ORCID,MacQuarrie E. R.^ORCID,Tom Leah^ORCID,Neyens S. F.^ORCID,Dodson J. P.,Thorgrimsson Brandur^ORCID,Corrigan J.,Ercan H. Ekmel^ORCID,Savage D. E.^ORCID,Lagally M. G.,Joynt Robert^ORCID,Coppersmith S. N.^ORCID,Friesen Mark^ORCID,Eriksson M. A.^ORCID

Funder

Army Research Office

Office of Naval Research

U.S. Department of Energy

National Science Foundation

Materials Research Institute, Pennsylvania State University

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.085406/fulltext

Reference37 articles.

1. Electronic properties of two-dimensional systems

2. High-mobility Si and Ge structures

3. Valley splitting theory ofSiGe∕Si∕SiGequantum wells

4. Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

5. A two-qubit logic gate in silicon

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1. Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells;Advanced Science;2024-09-11

2. Scalable parity architecture with a shuttling-based spin qubit processor;Physical Review B;2024-08-05

3. Mapping of valley splitting by conveyor-mode spin-coherent electron shuttling;npj Quantum Information;2024-06-19

4. Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K;Physical Review Materials;2024-04-12

5. Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy;npj Quantum Information;2024-03-27

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