Pattern evolution ofNiSi2grown on a Si surface upon high-current pulsed Ni-ion implantation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.1647/fulltext
Reference12 articles.
1. Compound formation by ion beam synthesis and a comparison with alternative methods such as deposition and growth or wafer bonding
2. High current ion source
3. C54‐TiSi2formed by direct high current Ti‐ion implantation
4. Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source
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1. Effect of Mg-film thickness on the formation of semiconductor Mg2Si films prepared by resistive thermal evaporation method;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2014-06
2. Preparation of NiSi2Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires;Applied Physics Express;2009-06-26
3. Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate;Journal of Applied Physics;2007-12-15
4. Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation;Journal of Alloys and Compounds;2004-02
5. Formation of TaSi2 and associated fractal growth on Si surface upon high current pulsed Ta-ion implantation;Journal of Alloys and Compounds;2004-01
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