Above-barrier resonant transitions inAlxGa1−xAs/AlAs/GaAs heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.8089/fulltext
Reference13 articles.
1. Exciton delocalization in thin double-barrier GaAs/AlAs/(Al,Ga)As quantum-well structures
2. Thermal escape of carriers out of GaAs/AlxGa1−xAs quantum-well structures
3. Confined electron states in ultrathin AlAs single quantum wells under pressure
4. Bound‐to‐extended state absorption GaAs superlattice transport infrared detectors
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1. Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers;Microelectronics Journal;2008-03
2. Resonant states in n ‐type δ‐doped GaAs quantum wells;physica status solidi (c);2005-07-27
3. Quasi-Bound Hole States in δ-Doped Quantum Wells;physica status solidi (b);2000-07
4. Direct observation of above-quantum-step quasibound states inGaAs/AlxGa1−xAs/vacuumheterostructures;Physical Review B;1998-04-15
5. Controlled type-I–type-II transition in GaAs/AlAs/AlxGa1−xAs double-barrier quantum wells;Physical Review B;1997-01-15
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