Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.115319/fulltext
Reference37 articles.
1. InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
2. Cyclotron Resonance and Far-Infrared Magneto-Absorption Experiments on Semimetallic InAs-GaSb Superlattices
3. Electronic Properties of Flat-Band Semiconductor Heterostructures
4. Self‐consistent calculations in InAs–GaSb heterojunctions
5. Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices
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1. Quantum anomalous Hall phase and effective in-plane Lande-g factor in an inverted quantum well;Journal of Physics: Condensed Matter;2023-11-22
2. Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields;Physical Review B;2017-10-10
3. Impact of strain on the electronic properties of InAs/GaSb quantum well systems;Physical Review B;2017-03-06
4. Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy;Physical Review B;2017-01-11
5. Electronic structure of InAs/GaSb core-shell nanowires;Physical Review B;2012-10-23
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