Pressure-inducedΓ-Xtransition in (Ga,In)P
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.13206/fulltext
Reference15 articles.
1. Room‐temperature continuous‐wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition
2. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
3. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
4. OMVPE growth of GaxIn1−xP/GaAs(AlyGa1−yAs) heterostructures for optical and electronic device applications
5. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
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