Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitrideCu3N-Reference-Cited by-同舟云学术

Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitrideCu3N

Published:2017-03-06 Issue:11 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Birkett Max,Savory Christopher N.,Fioretti Angela N.,Thompson Paul,Muryn Christopher A.,Weerakkody A. D.,Mitrovic I. Z.,Hall S.,Treharne Rob,Dhanak Vin R.,Scanlon David O.,Zakutayev Andriy,Veal Tim D.

Funder

Engineering and Physical Sciences Research Council

U.S. Department of Energy

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.115201/fulltext

Reference85 articles.

1. Cu3N Thin Film for a New Light Recording Media

2. Copper nitride and tin nitride thin films for write‐once optical recording media

3. Deposition and Characterization of Metastable Cu 3 N Layers for Applications in Optical Data Storage

4. Reproducible resistive-switching behavior in copper-nitride thin film prepared by plasma-immersion ion implantation

5. Intrinsic surface band bending inCu3N(100)ultrathin films

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