Multiscale modeling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.115337/fulltext
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1. Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors
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