Carrier capture in ultrathin InAs/GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.16833/fulltext
Reference35 articles.
1. Optical investigation of the electronic structure of single ultrathin InAs layers grown pseudomorphically on (100) and (311)AGaAs substrates
2. Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures
3. Magneto-optical properties in ultrathin InAs-GaAs quantum wells
4. Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces
5. Exciton localization in submonolayer InAs/GaAs multiple quantum wells
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1. Self-assembled Quantum Dots: From Stranski–Krastanov to Droplet Epitaxy;Self-Assembly of Nanostructures;2011-09-20
2. Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots;Nanotechnology;2010-03-23
3. Optical characterization of InAs -layers grown by MBE at different substrate temperatures;Microelectronics Journal;2008-11
4. ANALYSIS OF WAVEFUNCTION DISTRIBUTION IN QUANTUM WELL BIASED LASER DIODE USING TRANSFER MATRIX METHOD;Progress In Electromagnetics Research Letters;2008
5. Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations;Physical Review B;2007-10-11
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