Effect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.10702/fulltext
Reference24 articles.
1. Resonant Raman-active acoustic phonons in the mixed amorphous-microcrystalline phase of ion-implanted GaAs
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3. Raman study of defects in a GaAs buffer layer grown by low-temperature molecular beam epitaxy
4. Raman study of different phases in ion implanted silicon
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