Mechanism for the Staebler-Wronski effect ina-Si:H
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.3403/fulltext
Reference19 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
3. Saturation of the light‐induced defect density in hydrogenated amorphous silicon
4. Ab initiocalculations on metastable defects in a-Si:H: The Staebler-Wronski effect
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