β-Si3N4(0001)/Si(111) interface: Phosphorus defects, valence band offsets, and their role of passivating the interface states-Reference-Cited by-同舟云学术

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β-Si3N4(0001)/Si(111) interface: Phosphorus defects, valence band offsets, and their role of passivating the interface states

Published:2013-10-18 Issue:16 Volume:88 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Flage–Larsen E.,Løvvik O. M.,Fang C. M.,Kresse G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.165310/fulltext

Reference22 articles.

1. Silicon Nitride and Related Materials

2. Overview on SiN surface passivation of crystalline silicon solar cells

3. Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study

4. Band offsets for ultrathin SiO[sub 2] and Si[sub 3]N[sub 4] films on Si(111) and Si(100) from photoemission spectroscopy

5. Electronic structure and energy band offsets for ultrathin silicon nitride on Si(1 0 0)

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1. First-principles study of electron trapping by intrinsic surface states on β-Si3N4 (0001);Surface Science;2020-01

2. Microscopic mechanisms of Si(111) surface nitridation and energetics of Si3N4/Si(111) interface;Applied Surface Science;2019-07

3. Band offset and electronic properties at semipolar plane AlN($1\bar{1}01$)/diamond heterointerface;Chinese Physics B;2018-05

4. A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface;Journal of Applied Physics;2018-02-22

5. Measurement of core level and band offsets at the interface of ITO/Hg3In2Te6(110) heterojunction by synchrotron radiation photoelectron spectroscopy;Journal of Electron Spectroscopy and Related Phenomena;2016-02

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