Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells-Reference-Cited by-同舟云学术

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Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells

Published:2020-02-27 Issue:7 Volume:101 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Irie H.^ORCID,Akiho T.,Couëdo F.^ORCID,Ohana R.^ORCID,Suzuki K.^ORCID,Onomitsu K.,Muraki K.

Funder

Japan Society for the Promotion of Science

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.075433/fulltext

Reference37 articles.

1. Quantum Spin Hall Effect in Inverted Type-II Semiconductors

2. Finite conductivity in mesoscopic Hall bars of inverted InAs/GaSb quantum wells

3. Evidence for Helical Edge Modes in InvertedInAs/GaSbQuantum Wells

4. Edge channel transport in the InAs/GaSb topological insulating phase

5. Robust Helical Edge Transport in GatedInAs/GaSbBilayers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Topological phase transitions with zero indirect band gaps;Journal of Physics: Condensed Matter;2024-04-04

2. Charge transport spectra in superconductor-InAs/GaSb-superconductor heterostructures;Nanotechnology;2021-12-02

3. Helical liquids in semiconductors;Semiconductor Science and Technology;2021-10-28

4. Energy gap tuning and gate-controlled topological phase transition in InAs/InxGa1−xSb composite quantum wells;Physical Review Materials;2020-10-05

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